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| UTC PZTA44/ 45 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=400V(PZTA44) VCEO=350V(PZTA45) *Collector current up to 300mA *Complement to PZTA94/93 *Collector Dissipation: Pc(max)=2W 1 2 3 4 APPLICATION *Telephone switching *High voltage switch SOT-223 1:EMITTER 2,4:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified) PARAMETER Collector-base voltage PZTA44 PZTA45 Collector-emitter voltage PZTA44 PZTA45 Emitter-base voltage Collector dissipation(Ta=25C) Collector dissipation(Tc=25C) Collector current Junction Temperature Storage Temperature SYMBOL VCBO RATING 500 400 UNIT V V VCEO VEBO Pc Pc Ic Tj TSTG 400 350 6 625 2 300 150 -55 ~ +150 V mW W mA C C UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R207-003,A UTC PZTA44/ 45 PARAMETER NPN EPITAXIAL SILICON TRANSISTOR SYMBOL BVCBO ELECTRICAL CHARACTERISTICS (Tj=25C,unless otherwise specified) TEST CONDITIONS Ic=100A,IB=0 500 400 BVCEO Ic=1mA,IB=0 400 350 6 0.1 0.1 A VCE=400V,IB=0 VCE=320V,IB=0 VEB=4V,Ic=0 VCE=10V,Ic=1mA VCE=10V,Ic=10mA VCE=10V,Ic=50mA VCE=10V,Ic=100mA Ic=1mA,IB=0.1mA Ic=10mA,IB=1mA Ic=50mA,IB=5mA Ic=10mA,IB=1mA VCE=20V,Ic=10mA, f=100MHz VCB=20V,IE=0 f=1MHz 0.5 0.5 0.1 40 50 45 40 240 V V A V MIN TYP MAX UNIT Collector-base breakdown voltage PZTA44 PZTA45 Collector-emitter breakdown voltage PZTA44 PZTA45 Emitter-base breakdown voltage Collector cut-off current PZTA44 PZTA45 Collector cut-off current PZTA44 PZTA45 Emitter cut-off current DC current gain(note) BVEBO ICBO IE=100A,Ic=0 VCB=400V,IE=0 VCB=320V,IE=0 ICES IEBO hFE A Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage Current gain bandwidth product Output capacitance VBE(sat) fT Cob 0.4 0.5 0.75 0.75 50 7 V V MHz pF Note:Pulse test:PW<300s,Duty Cycle<2% UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R207-003,A UTC PZTA44/ 45 NPN EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTIC CURVES Fig.1 DC current gain 1 10 Fig.2 Turn-on switching times 2 10 Fig.3 Turn-off switching times HFE,DC current current gain 140 120 100 80 60 40 20 0 -20 -40 0 10 1 10 2 10 3 10 4 10 -1 10 0 10 1 10 VCE=10V Time(s) Time(s) VCE=150V Ic/IB=10 Ta=25 C VBE(OFF)=4V 0 10 VCE=150V Ic/IB=10 Ta=25 C 1 10 Ts 0 10 Tf Tf Td 2 10 -1 10 0 10 1 10 2 10 Ic,Collector current(mA) Ic,Collector current(mA) Ic,Collector current(mA) Fig.4 Capacitance 3 10 1.0 Fig.5 ON Voltage 0.5 Fig.6 Collector saturation region Collector-Emitter voltage(V) 0.8 Ta=25 C VBE(sat),Ic/IB=10 0.4 Capacitance(pF) Ic=1mA Ic=10mA Ic=50mA voltage(V) 2 10 Cib 0.6 0.3 VBE(ON),VCE=10V 0.4 0.2 1 10 Cob 0.2 VCE(sat),Ic/IB=10 0.1 0 10 -1 10 0 10 1 10 2 10 3 10 0 -1 10 0 10 1 10 2 10 3 10 0 Ta=25 C 2 10 3 10 4 10 5 10 1 10 Collector voltage(V) Ic,Collector current(mA) Ib, base current(A) Fig.7 High Frequency current gain Small signal current gain,H FE 2 10 4 10 Fig.8 Safe operating area Valid Duty Cycle<10% 1ms 1s 5 =2 Tc Ic,Collector current(mA) 1 10 VCE=10V f=10MHz Ta=25 C 3 10 0.1ms 2 10 = Ta 25 C C 0 10 1 10 -1 10 -1 10 0 10 1 10 2 10 3 10 0 10 PZTA44 0 10 1 10 2 10 3 10 4 10 Ic,Collector current(mA) Collector voltage(V) UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R207-003,A UTC PZTA44/ 45 NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 4 QW-R207-003,A |
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